This paper describes the theoretical design and predicts the performances using Monte Carlo simulation of InN-based dual channel high electron mobility transistor (HEMT). A high sheet carrier concentration and strong electron confinement at specific interfaces of the InN-based heterostructures are predicted as a consequence of piezoelectric and spontaneous polarization effects. The calculated sheet carrier concentration reaches as high as 1.64times10 14 cm -2 for dual channel HEMT. The sheet carriers generated in InN-based double channel are found to be higher than the reported values for the conventional single channel HEMTs. The 2DEGs mobility is found to be 11.76times10 4 cm 2 V -1 sce -1 at sheet carrier concentration, n s = 1.2times10 13 cm -2 for 100 K. At room temperature, the drain current of the proposed InN-based dual channel HEMTs is 1.2 Amm -1 at gate voltage V G = 2 V. The drain current capabilities are found to be substantially superior to the conventional single channel HEMTs.