This article aims to provide a synopsis of recent advances in the use of nanostructured features to augment the conversion efficiency of gallium arsenide (GaAs) solar cells. GaAs are a very well-known and highly advantageous material for solar cells because they possess an extraordinary bandgap (i.e., approximately 1.4 eV), wide spectral absorption coefficient, and favorable carrier mobility. Numerous studies have explored the use of nanostructures, such as antireflection (AR) nanofilms/nanocoatings, nanoparticles (NPs), and nanogratings (NG), to improve the conversion efficiency of GaAs-based solar cells. These structures are generally designed to enhance light transmission capacity and absorption while reducing light reflection losses, thus resulting in improved conversion efficiency. Hence, the latest research efforts and advancements in the field of GaAs solar cells have been conducted worldwide, highlighting the possible future of advanced microstructure development to enhance the conversion efficiency of GaAs-based solar cells. This review highlights the role of nanostructured features such as antireflection coatings, nanoparticles, and nanogratings to be utilized for enhancing GaAs solar cell efficiency. Efficiency improvements of 20–30 % have been reported, attributed to enhanced light absorption and reduced reflection losses. While these nanostructures are highly promising, widespread application depends on low-cost fabrication and stability. The review critically examines recent progress, current challenges, and future directions for maximizing GaAs solar cell performance.