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Title

Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET

Author

Muhibul Haque Bhuyan,

Email

muhibulhb@yahoo.com

Abstract

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poissonpsilas equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The result is compared with two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords

Threshold voltage , MOSFET circuits , Semiconductor process modeling , Poisson equations , Doping profiles , Circuit simulation , Surface fitting , Telecommunication computing , Electronic mail , Ultra large scale integration

Journal or Conference Name

World Academy of Science, Engineering and Technology

Publication Year

2010

Indexing

scopus